Wide band-gap semiconductors (SiC/GaN) are commonly used along with traditional silicon in high performance applications due to their higher rated switching frequencies, voltage/currents and operating temperatures.

DC instrumentation must be capable of outputting high voltage/currents to test these wide bandgap devices, while providing sufficient measurement resolution for accurate characterization. For example, GaN MOSFETs can have on-resistances (RdsOn) with single digit milliohm values. This can be beyond the capabilities of typical automated test equipment (ATE) testers.

Join us for a live demonstration where we will exhibit how Keithley's high power instruments can help you characterize such high performance devices.

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