Wideband-gap semiconductors (SiC/GaN) are growing and quickly replacing traditional Silicon for automotive and consumer electronics due to their higher power efficiency and power density.
SiC/GaN power devices operate at much higher voltage, frequencies and temperature compared to conventional semiconductor materials . Characterizing breakdown voltage, on-resistance and capacitance of these devices requires equipment that is able to output high voltage and current while still giving accurate and repeatable measurements.
This live webinar features a demonstration where we will exhibit how you can characterize such high power MOSFET with Keithley instruments.
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Presenter
Stephen Tang
Regional Applications Engineer
As Regional Applications Engineer, Stephen helps fellow engineers to accelerate project progress in multiple applications such as power electronics, semiconductor characterization and material engineering.
He was previously and applications engineer with National Instruments specialising in data acquisition and test automation. He collaborates closely with sales and marketing supporting multiple business wins.
Stephen received his Bachelor (First Class Hons) of Electrical and Electronics Engineering from the Nanyang Technological University, Singapore.