Challenges in GaN HEMT Power Device DC Characterization

GaN HEMT devices are very fast and efficient and have a unique structure and performance, but oscillation is one of the primary challenges with high frequency devices during the DC characterization.

This application note discussed the oscillation challenges and offered best practices (optimized cabling and connection, adding ferrites or capacitance, and other) to best address the need to minimize or eliminate the different oscillation contributors.

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Keithley SMU 2650 Series High Power SourceMeter®

The 2650 Series High Power SourceMeter SMU Instruments are designed specifically for characterizing and testing high voltage/current electronics and power semiconductors, such as diodes, FETs, and IGBTs, high brightness LEDs, DC-DC converters, batteries, solar cells, and other high power materials, components, modules, and subassemblies. They deliver unprecedented power, precision, speed, flexibility, and ease of use to improve productivity in R&D, production test, and reliability environments. Available in two models offering up to 3000V or up to 2000W of pulse current power.


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