GaN HEMT devices are very fast and efficient and have a unique structure and performance, but oscillation is one of the primary challenges with high frequency devices during the DC characterization.

This application note discussed the oscillation challenges and offered best practices (optimized cabling and connection, adding ferrites or capacitance, and other) to best address the need to minimize or eliminate the different oscillation contributors.

Get a copy of the app note to learn more. 

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